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Lessons learned from low-frequency noise studies on fully depleted UTBOX silicon-on-insulator MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSantos, Sara Deresste D.
dc.contributor.authorMartino, Joao
dc.contributor.authorStrobel, Vincent
dc.contributor.authorCretu, Bogdan
dc.contributor.authorRoutoure, Jean-Marc
dc.contributor.authorCarin, Regis
dc.contributor.authorLuque Rodriguez, Abraham
dc.contributor.authorJimenez Tejada, Juan Antonio
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T12:05:24Z
dc.date.available2021-10-21T12:05:24Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23086
dc.sourceIIOimport
dc.titleLessons learned from low-frequency noise studies on fully depleted UTBOX silicon-on-insulator MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.identifier.doi10.1149/05305.0049ecst
dc.source.peerreviewyes
dc.source.beginpage49
dc.source.endpage61
dc.source.conferenceAdvanced Semiconductor-on-Insulator Technology and Related Physics 16
dc.source.conferencedate12/05/2013
dc.source.conferencelocationToronto Canada
imec.availabilityPublished - imec
imec.internalnotesECS Proceedings; Vol. 53; Issue 5


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