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Analysis of border traps in high-k gate dielectrics on high-mobility channels

dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMerckling, Clement
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T12:07:18Z
dc.date.available2021-10-21T12:07:18Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23090
dc.sourceIIOimport
dc.titleAnalysis of border traps in high-k gate dielectrics on high-mobility channels
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.beginpage300
dc.source.endpage304
dc.source.conference28th Symposium on Microelectronics Technology and Devices - SBMICRO
dc.source.conferencedate2/09/2013
dc.source.conferencelocationCuritiba Brazil
imec.availabilityPublished - imec


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