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Si cap passivation for Ge nMOS applications

dc.contributor.authorSioncke, Sonja
dc.contributor.authorVanherle, Wendy
dc.contributor.authorArt, Wim
dc.contributor.authorCeuppens, Joris
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorLin, Dennis
dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.authorConard, Thierry
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCaymax, Matty
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-21T12:10:44Z
dc.date.available2021-10-21T12:10:44Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23097
dc.sourceIIOimport
dc.titleSi cap passivation for Ge nMOS applications
dc.typeJournal article
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorArt, Wim
dc.contributor.imecauthorCeuppens, Joris
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage46
dc.source.endpage49
dc.source.journalMicroelectronic Engineering
dc.source.volume109
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S016793171300378X
imec.availabilityPublished - open access
imec.internalnotesINFOS 2013 paper


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