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dc.contributor.authorSmets, Quentin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorMerckling, Clement
dc.contributor.authorLin, Dennis
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAlian, AliReza
dc.contributor.authorMirco, Cantoro
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorKao, Frank
dc.contributor.authorVerreck, Devin
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-21T12:12:33Z
dc.date.available2021-10-21T12:12:33Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23101
dc.sourceIIOimport
dc.titleIn0.53Ga0.47As diodes for band-to-band tunneling calibration: design, fabrication and characterization
dc.typeProceedings paper
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorKao, Frank
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage752
dc.source.endpage753
dc.source.conferenceSolid State Devices and Materials Conference - SSDM
dc.source.conferencedate24/09/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - imec


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