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Comparison of AlGaN/GaN MISHEMT powerbar designs

dc.contributor.authorStoffels, Steve
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorVenegas, Rafael
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-21T12:25:04Z
dc.date.available2021-10-21T12:25:04Z
dc.date.issued2013-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23129
dc.sourceIIOimport
dc.titleComparison of AlGaN/GaN MISHEMT powerbar designs
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference10th International Conference on Nitride Semiconductors
dc.source.conferencedate25/08/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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