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Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks

dc.contributor.authorTang, Baojun
dc.contributor.authorRobinson, Colin
dc.contributor.authorZhang, Weidong
dc.contributor.authorZhang, Fujian
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBlomme, Pieter
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-21T12:35:54Z
dc.date.available2021-10-21T12:35:54Z
dc.date.issued2013-07
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23152
dc.sourceIIOimport
dc.titleRead and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage2261
dc.source.endpage2267
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume60
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6527944
imec.availabilityPublished - imec


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