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Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks
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Authors
Tang, Baojun
;
Robinson, Colin
;
Zhang, Weidong
;
Zhang, Fujian
;
Degraeve, Robin
;
Blomme, Pieter
;
Toledano Luque, Maria
;
Van den Bosch, Geert
;
Govoreanu, Bogdan
;
Van Houdt, Jan
ISSN
0018-9383
Issue
7
Journal
IEEE Transactions on Electron Devices
Volume
60
Title
Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks
Publication type
Journal article
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