Publication:

Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks

Date

2013-07
Journal article
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dc.contributor.authorTang, Baojun
dc.contributor.authorRobinson, Colin
dc.contributor.authorZhang, Weidong
dc.contributor.authorZhang, Fujian
dc.contributor.authorDegraeve, Robin
dc.contributor.authorBlomme, Pieter
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-21T12:35:54Z
dc.date.available2021-10-21T12:35:54Z
dc.date.issued2013-07
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23152
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6527944
dc.source.beginpage2261
dc.source.endpage2267
dc.source.issue7
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume60
dc.title

Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks

dc.typeJournal article
dspace.entity.typePublication
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