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Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization

dc.contributor.authorTang, Baojun
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorZhang, W.D.
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZhang, J.F.
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-21T12:36:24Z
dc.date.available2021-10-21T12:36:24Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23153
dc.sourceIIOimport
dc.titleStatistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
dc.typeJournal article
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage39
dc.source.endpage42
dc.source.journalMicroelectronic Engineering
dc.source.volume109
imec.availabilityPublished - imec
imec.internalnotesINFOS 2013 special issue


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