Show simple item record

Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRoussel, Philippe
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T12:47:34Z
dc.date.available2021-10-21T12:47:34Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23175
dc.sourceIIOimport
dc.titleAnalytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.source.peerreviewyes
dc.source.beginpage314
dc.source.endpage317
dc.source.journalMicroelectronic Engineering
dc.source.volume109
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713002499
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record