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Wet-chemical etching of InGaAs for advanced CMOS processing

dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorArnauts, Sophia
dc.contributor.authorCuypers, Daniel
dc.contributor.authorRip, Jens
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-21T13:21:47Z
dc.date.available2021-10-21T13:21:47Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23245
dc.sourceIIOimport
dc.titleWet-chemical etching of InGaAs for advanced CMOS processing
dc.typeProceedings paper
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage281
dc.source.endpage287
dc.source.conferenceSemiconductor Cleaning Science and technology 13
dc.source.conferencedate28/10/2013
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/58/6/281.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 58, Issue 6


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