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W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes

dc.contributor.authorVeloso, Anabela
dc.contributor.authorChew, Soon Aik
dc.contributor.authorSchram, Tom
dc.contributor.authorDekkers, Harold
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorWitters, Thomas
dc.contributor.authorTielens, Hilde
dc.contributor.authorHeylen, Nancy
dc.contributor.authorDevriendt, Katia
dc.contributor.authorSebaai, Farid
dc.contributor.authorBrus, Stephan
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorPantisano, Luigi
dc.contributor.authorEneman, Geert
dc.contributor.authorCarbonell, Laure
dc.contributor.authorRichard, Olivier
dc.contributor.authorFavia, Paola
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorHiguchi, Yuichi
dc.contributor.authorPhatak, Anup
dc.contributor.authorThean, Aaron
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-21T13:57:29Z
dc.date.available2021-10-21T13:57:29Z
dc.date.issued2013
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23316
dc.sourceIIOimport
dc.titleW versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecWitters, Thomas::0000-0002-8528-9469
dc.contributor.orcidimecBrus, Stephan::0000-0003-3554-0640
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage04CA03
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue4
dc.source.volume52
imec.availabilityPublished - imec


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