Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Publication:
W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Copy permalink
Date
2013
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
27510.pdf
1.76 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Veloso, Anabela
;
Chew, Soon Aik
;
Schram, Tom
;
Dekkers, Harold
;
Van Ammel, Annemie
;
Witters, Thomas
;
Tielens, Hilde
;
Heylen, Nancy
;
Devriendt, Katia
;
Sebaai, Farid
;
Brus, Stephan
;
Ragnarsson, Lars-Ake
;
Pantisano, Luigi
;
Eneman, Geert
;
Carbonell, Laure
;
Richard, Olivier
;
Favia, Paola
;
Geypen, Jef
;
Bender, Hugo
;
Higuchi, Yuichi
;
Phatak, Anup
;
Thean, Aaron
;
Horiguchi, Naoto
Journal
Japanese Journal of Applied Physics
Abstract
Description
Metrics
Views
2002
since deposited on 2021-10-21
1
last month
Acq. date: 2025-12-11
Citations
Metrics
Views
2002
since deposited on 2021-10-21
1
last month
Acq. date: 2025-12-11
Citations