Publication:

W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes

Date

2013
Journal article
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorChew, Soon Aik
dc.contributor.authorSchram, Tom
dc.contributor.authorDekkers, Harold
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorWitters, Thomas
dc.contributor.authorTielens, Hilde
dc.contributor.authorHeylen, Nancy
dc.contributor.authorDevriendt, Katia
dc.contributor.authorSebaai, Farid
dc.contributor.authorBrus, Stephan
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorPantisano, Luigi
dc.contributor.authorEneman, Geert
dc.contributor.authorCarbonell, Laure
dc.contributor.authorRichard, Olivier
dc.contributor.authorFavia, Paola
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorHiguchi, Yuichi
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecWitters, Thomas::0000-0002-8528-9469
dc.contributor.orcidimecBrus, Stephan::0000-0003-3554-0640
dc.date.accessioned2021-10-21T13:57:29Z
dc.date.available2021-10-21T13:57:29Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23316
dc.source.beginpage04CA03
dc.source.issue4
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume52
dc.title

W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes

dc.typeJournal article
dspace.entity.typePublication
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