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W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Publication:
W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Date
2013
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Veloso, Anabela
;
Chew, Soon Aik
;
Schram, Tom
;
Dekkers, Harold
;
Van Ammel, Annemie
;
Witters, Thomas
;
Tielens, Hilde
;
Heylen, Nancy
;
Devriendt, Katia
;
Sebaai, Farid
;
Brus, Stephan
;
Ragnarsson, Lars-Ake
;
Pantisano, Luigi
;
Eneman, Geert
;
Carbonell, Laure
;
Richard, Olivier
;
Favia, Paola
;
Geypen, Jef
;
Bender, Hugo
;
Higuchi, Yuichi
;
Phatak, Anup
;
Thean, Aaron
;
Horiguchi, Naoto
Journal
Japanese Journal of Applied Physics
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1998
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations
Metrics
Views
1998
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations