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Composition and thickness dependence of GeSn growth by chemical vapor deposition

dc.contributor.authorWang, Wei
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNieddu, Thomas
dc.contributor.authorGencarelli, Federica
dc.contributor.authorNguyen, Duy
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-21T14:29:05Z
dc.date.available2021-10-21T14:29:05Z
dc.date.issued2013-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23379
dc.sourceIIOimport
dc.titleComposition and thickness dependence of GeSn growth by chemical vapor deposition
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage51
dc.source.endpage52
dc.source.conference8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - imec


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