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New approaches for formation of ultra-thin PtSi layers for infrared applications

dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorZagrebnov, Maxim
dc.contributor.authorBaert, Kris
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.date.accessioned2021-09-30T11:24:52Z
dc.date.available2021-09-30T11:24:52Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2338
dc.sourceIIOimport
dc.titleNew approaches for formation of ultra-thin PtSi layers for infrared applications
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage241
dc.source.conferenceAdvanced Interconnects and Contact Materials and Processes for Future Integrated Circuits
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 514


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