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AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction

dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorChini, Alessandro
dc.contributor.authorMarcon, Denis
dc.contributor.authorMeneghesso, Gaudenzio
dc.date.accessioned2021-10-21T14:59:09Z
dc.date.available2021-10-21T14:59:09Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23434
dc.sourceIIOimport
dc.titleAlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3119
dc.source.endpage3131
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume60
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6564457
imec.availabilityPublished - open access


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