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Heavy ion and laser-induced transients in SiGe channel pMOSFETs

dc.contributor.authorZhang, E.X.
dc.contributor.authorSamsel, I.K.
dc.contributor.authorBennett, W.G.
dc.contributor.authorHooten, N.C.
dc.contributor.authorMcCurdy, M.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorReed, R.A.
dc.contributor.authorAlles, M.L.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorWeller, R.A.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.date.accessioned2021-10-21T15:00:51Z
dc.date.available2021-10-21T15:00:51Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23437
dc.sourceIIOimport
dc.titleHeavy ion and laser-induced transients in SiGe channel pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.beginpageFA7-03
dc.source.conferenceInternational Semiconductors Device Research Symposium
dc.source.conferencedate11/12/2013
dc.source.conferencelocationBethesda, MD USA
imec.availabilityPublished - imec


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