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Damage free cryogenic etching of a porous organosilica ultralow-k film

dc.contributor.authorZhang, Liping
dc.contributor.authorLeffaucheux, P.
dc.contributor.authorTillocher, T.
dc.contributor.authorDussart, R.
dc.contributor.authorMankelevich, Y.
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-21T15:03:24Z
dc.date.available2021-10-21T15:03:24Z
dc.date.issued2013
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23442
dc.sourceIIOimport
dc.titleDamage free cryogenic etching of a porous organosilica ultralow-k film
dc.typeJournal article
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpageN5
dc.source.endpageN7
dc.source.journalElectrochemical and Solid-State Letters
dc.source.issue2
dc.source.volume2
imec.availabilityPublished - imec


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