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Low damage cryogenic etching of porous organosilicate low-k materials using SF6/O2/SiF4

dc.contributor.authorZhang, Liping
dc.contributor.authorLjazouli, Rami
dc.contributor.authorLefaucheux, Philippe
dc.contributor.authorTillocher, Thomas
dc.contributor.authorDussart, Remi
dc.contributor.authorMankelevich, Yuri
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-21T15:03:57Z
dc.date.available2021-10-21T15:03:57Z
dc.date.issued2013
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23443
dc.sourceIIOimport
dc.titleLow damage cryogenic etching of porous organosilicate low-k materials using SF6/O2/SiF4
dc.typeJournal article
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageN131
dc.source.endpageN139
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue6
dc.source.volume2
imec.availabilityPublished - open access


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