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Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature

dc.contributor.authorAchour, H.
dc.contributor.authorCretu, Bogdan
dc.contributor.authorRoutoure, Jean-Marc
dc.contributor.authorCarin, Regis
dc.contributor.authorBenfdila, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T00:43:02Z
dc.date.available2021-10-22T00:43:02Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23465
dc.sourceIIOimport
dc.titlePerformances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage181
dc.source.endpage184
dc.source.conferenceCAS International Semiconductor Conference
dc.source.conferencedate13/10/2014
dc.source.conferencelocationSinaia Romania
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6966429
imec.availabilityPublished - open access


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