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The impact of a (Si)Ge heterojunction on the analog performance of vertical tunnel FETs

dc.contributor.authorAgopian, Paula
dc.contributor.authorMartino, Jao
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorSimoen, Eddy
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T00:43:13Z
dc.date.available2021-10-22T00:43:13Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23476
dc.sourceIIOimport
dc.titleThe impact of a (Si)Ge heterojunction on the analog performance of vertical tunnel FETs
dc.typeProceedings paper
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage127
dc.source.endpage133
dc.source.conferenceHigh Purity and High Mobility Semiconductors 13
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/11/127.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 64, Issue 11


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