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Geometrical structure and interface dependence of bias dtress induced threshold voltage shift in C60-based OFETs

dc.contributor.authorAhmed, Rizwan
dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorSimbrunner, Clemens
dc.contributor.authorSchwabegger, Günther
dc.contributor.authorBaig, Muhammad
dc.contributor.authorSitter, Helmut
dc.date.accessioned2021-10-22T00:43:19Z
dc.date.available2021-10-22T00:43:19Z
dc.date.issued2014
dc.identifier.issn1944-8244
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23481
dc.sourceIIOimport
dc.titleGeometrical structure and interface dependence of bias dtress induced threshold voltage shift in C60-based OFETs
dc.typeJournal article
dc.contributor.imecauthorKadashchuk, Andriy
dc.source.peerreviewyes
dc.source.beginpage15148
dc.source.endpage15153
dc.source.journalACS Applied Materials & Interfaces
dc.source.volume6
dc.identifier.urlhttp://pubs.acs.org/doi/abs/10.1021/am5032192
imec.availabilityPublished - imec


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