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Impact of etch stop layer on negative bias illumination stress of amorphous indium gallium zinc oxide transistors

dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorNag, Manoj
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T00:46:47Z
dc.date.available2021-10-22T00:46:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23550
dc.sourceIIOimport
dc.titleImpact of etch stop layer on negative bias illumination stress of amorphous indium gallium zinc oxide transistors
dc.typeProceedings paper
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage302
dc.source.endpage304
dc.source.conference44th European Solid-State Device Conference - ESSDERC
dc.source.conferencedate22/09/2014
dc.source.conferencelocationVenice Italy
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948820
imec.availabilityPublished - open access


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