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Interpretation of frequency dependent capacitance-voltage curves of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors

dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorNag, Manoj
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-22T00:46:51Z
dc.date.available2021-10-22T00:46:51Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23551
dc.sourceIIOimport
dc.titleInterpretation of frequency dependent capacitance-voltage curves of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors
dc.typeProceedings paper
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpagena
dc.source.conferenceInternational Meeting on Information Display - IMID
dc.source.conferencedate26/08/2014
dc.source.conferencelocationDaegu Korea
imec.availabilityPublished - imec


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