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Analog performance of standard and uinaxial strained triple-gate SOI FinFET under X-ray radiation

dc.contributor.authorBordallo, Caio
dc.contributor.authorTeixeira, Fernando
dc.contributor.authorSilveira, Marcilei
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-22T00:48:14Z
dc.date.available2021-10-22T00:48:14Z
dc.date.issued2014
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23569
dc.sourceIIOimport
dc.titleAnalog performance of standard and uinaxial strained triple-gate SOI FinFET under X-ray radiation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage125015
dc.source.journalSemiconductor Science and Technology
dc.source.issue12
dc.source.volume29
imec.availabilityPublished - imec


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