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Circuit simulation of workload-dependent RTN and BTI based on trap kinetics

dc.contributor.authorCamargo, V. V. A.
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, T.
dc.contributor.authorWirth, G.
dc.date.accessioned2021-10-22T00:51:35Z
dc.date.available2021-10-22T00:51:35Z
dc.date.issued2014
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23601
dc.sourceIIOimport
dc.titleCircuit simulation of workload-dependent RTN and BTI based on trap kinetics
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage2364
dc.source.endpage2370
dc.source.journalMicroelectronics Reliability
dc.source.issue11
dc.source.volume54
dc.identifier.urlhttp://dx.doi.org/10.1016/j.microrel.2014.06.003
imec.availabilityPublished - imec


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