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Gated and STI defined ESD diodes in advanced bulk FinFET technologies

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorLinten, Dimitri
dc.contributor.authorLee, J.-W.
dc.contributor.authorScholz, Mirko
dc.contributor.authorHellings, Geert
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorBoschke, Roman
dc.contributor.authorSong, M.-H.
dc.contributor.authorSee, Y.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-22T00:55:27Z
dc.date.available2021-10-22T00:55:27Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23632
dc.sourceIIOimport
dc.titleGated and STI defined ESD diodes in advanced bulk FinFET technologies
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage514
dc.source.endpage517
dc.source.conference2014 IEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2014
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7047089
imec.availabilityPublished - open access


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