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Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process

dc.contributor.authorCho, Moon Ju
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorLee, Jae Woo
dc.contributor.authorKaczer, Ben
dc.contributor.authorVeloso, Anabela
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-22T00:57:57Z
dc.date.available2021-10-22T00:57:57Z
dc.date.issued2014-03
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23650
dc.sourceIIOimport
dc.titleImproved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process
dc.typeJournal article
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage408
dc.source.endpage412
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue1
dc.source.volume14
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6626571
imec.availabilityPublished - imec


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