Publication:
Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process
Date
Loading...
Journal
Abstract
Description
Metrics
Views
1850 since deposited on 2021-10-22
409item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1850 since deposited on 2021-10-22
409item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations