Publication:

Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process

Date

2014-03

Journal article

Simple item page Full metadata Statistics

Author(s)

;

Arimura, Hiroaki

;

;

;

Veloso, Anabela

;

Boccardi, Guillaume

;

Ragnarsson, Lars-Ake

;

Kauerauf, Thomas

;

Horiguchi, Naoto

;

Groeseneken, Guido

Journal

IEEE Transactions on Device and Materials Reliability

Statistics

1853 since deposited on 2021-10-22

1last month

Acq. date: 2026-02-27