Publication:

Improved channel hot carrier reliability in p-FinFETs with replacement metal gate by a nitrogen post deposition anneal process

Date

Loading...
Thumbnail Image

Abstract

Description

Statistics

Views

1854 since deposited on 2021-10-22
1last month
Acq. date: 2026-04-06

Citations

Statistics

Views

1854 since deposited on 2021-10-22
1last month
Acq. date: 2026-04-06

Citations