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Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1-x/Al2O3 interfaces for CBRAM

dc.contributor.authorDe Stefano, Francesca
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHoussa, Michel
dc.contributor.authorGoux, Ludovic
dc.contributor.authorOpsomer, Karl
dc.contributor.authorJurczak, Gosia
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-22T01:09:56Z
dc.date.available2021-10-22T01:09:56Z
dc.date.issued2014
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23727
dc.sourceIIOimport
dc.titleInfluence of metal electrode stoichiometry on the electron barrier height at CuxTe1-x/Al2O3 interfaces for CBRAM
dc.typeJournal article
dc.contributor.imecauthorDe Stefano, Francesca
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage9
dc.source.endpage12
dc.source.journalMicroelectronic Engineering
dc.source.volume120
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713006011
imec.availabilityPublished - imec


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