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Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions

dc.contributor.authorDuan, M.
dc.contributor.authorZhang, J. F.
dc.contributor.authorJi, Z.
dc.contributor.authorZhang, W. D.
dc.contributor.authorKaczer, Ben
dc.contributor.authorSchram, Tom
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorAsenov, A.
dc.date.accessioned2021-10-22T01:19:13Z
dc.date.available2021-10-22T01:19:13Z
dc.date.issued2014
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23774
dc.sourceIIOimport
dc.titleDevelopment of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.source.peerreviewyes
dc.source.beginpage3081
dc.source.endpage3089
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume61
dc.identifier.urlhttp://dx.doi.org/10.1109/TED.2014.2335053
imec.availabilityPublished - imec


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