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MBE studies for In0.53Ga0.47As growth using strained buffer layers and in-situ high-k gate passivation

dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorHsu, Mark
dc.contributor.authorEzzedini, Maher
dc.contributor.authorMerckling, Clement
dc.date.accessioned2021-10-22T01:22:20Z
dc.date.available2021-10-22T01:22:20Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23789
dc.sourceIIOimport
dc.titleMBE studies for In0.53Ga0.47As growth using strained buffer layers and in-situ high-k gate passivation
dc.typeMeeting abstract
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewno
dc.source.conferenceCompound Semiconductor Week 2014
dc.source.conferencedate11/05/2014
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - imec


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