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On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

dc.contributor.authorGoux, Ludovic
dc.contributor.authorRaghavan, Naga
dc.contributor.authorFantini, Andrea
dc.contributor.authorNigon, Robin
dc.contributor.authorStrangio, Sebastiano
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorChen, Yangyin
dc.contributor.authorDe Stefano, Francesca
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-22T01:42:05Z
dc.date.available2021-10-22T01:42:05Z
dc.date.issued2014
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23872
dc.sourceIIOimport
dc.titleOn the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorDe Stefano, Francesca
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage134502
dc.source.journalJournal of Applied Physics
dc.source.issue13
dc.source.volume116
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4896841
imec.availabilityPublished - open access


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