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On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
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Authors
Goux, Ludovic
;
Raghavan, Naga
;
Fantini, Andrea
;
Nigon, Robin
;
Strangio, Sebastiano
;
Degraeve, Robin
;
Kar, Gouri Sankar
;
Chen, Yangyin
;
De Stefano, Francesca
;
Afanasiev, Valeri
;
Jurczak, Gosia
ISSN
0021-8979
Issue
13
Journal
Journal of Applied Physics
Volume
116
Title
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
Publication type
Journal article
Embargo date
9999-12-31
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