Publication:

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Date

2014
Journal article
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dc.contributor.authorGoux, Ludovic
dc.contributor.authorRaghavan, Naga
dc.contributor.authorFantini, Andrea
dc.contributor.authorNigon, Robin
dc.contributor.authorStrangio, Sebastiano
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorChen, Yangyin
dc.contributor.authorDe Stefano, Francesca
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorDe Stefano, Francesca
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-22T01:42:05Z
dc.date.available2021-10-22T01:42:05Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23872
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4896841
dc.source.beginpage134502
dc.source.issue13
dc.source.journalJournal of Applied Physics
dc.source.volume116
dc.title

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

dc.typeJournal article
dspace.entity.typePublication
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