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Impact of 3D integration on 7nm high mobility channel devices operating in the ballistic regime

dc.contributor.authorGuo, Wei
dc.contributor.authorChoi, Munkang
dc.contributor.authorRouhi Najaf Abadi, Alireza
dc.contributor.authorMoroz, Victor
dc.contributor.authorVan der Plas, Geert
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-22T01:46:46Z
dc.date.available2021-10-22T01:46:46Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23889
dc.sourceIIOimport
dc.titleImpact of 3D integration on 7nm high mobility channel devices operating in the ballistic regime
dc.typeProceedings paper
dc.contributor.imecauthorGuo, Wei
dc.contributor.imecauthorVan der Plas, Geert
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecVan der Plas, Geert::0000-0002-4975-6672
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.source.peerreviewyes
dc.source.beginpage168
dc.source.endpage171
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2014
dc.source.conferencelocationSan Francisco, CA United States
imec.availabilityPublished - imec


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