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Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon

dc.contributor.authorBender, Hugo
dc.contributor.authorJin, S.
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorPattyn, Hugo
dc.contributor.authorLangouche, H.
dc.date.accessioned2021-09-30T11:27:37Z
dc.date.available2021-09-30T11:27:37Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2389
dc.sourceIIOimport
dc.titleEpitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorPattyn, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage198
dc.source.endpage199
dc.source.conferenceElectron Microscopy 96; Proceedings of EUREM-11, The 11th Conference on Electron Microscopy
dc.source.conferencedate26/08/1996
dc.source.conferencelocationDublin Ireland
imec.availabilityPublished - open access


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