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Characterization of semiconductor samples using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

dc.contributor.authorHermann, Peter
dc.contributor.authorHoehl, Arne
dc.contributor.authorUlrich, Georg
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorHermelink, Antje
dc.contributor.authorKästner, Bernd
dc.contributor.authorPatoka, Piotr
dc.contributor.authorHornemann, Andrea
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.authorRühl, Eckart
dc.contributor.authorUlm, Gerhard
dc.date.accessioned2021-10-22T01:54:40Z
dc.date.available2021-10-22T01:54:40Z
dc.date.issued2014
dc.identifier.issn1094-4087
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23921
dc.sourceIIOimport
dc.titleCharacterization of semiconductor samples using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy
dc.typeJournal article
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage17948
dc.source.endpage17958
dc.source.journalOptics Express
dc.source.issue15
dc.source.volume22
dc.identifier.urlhttp://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-22-15-17948
imec.availabilityPublished - open access


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