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dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMertens, Hans
dc.contributor.authorRyan, Paul
dc.contributor.authorLanger, Robert
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-22T01:58:59Z
dc.date.available2021-10-22T01:58:59Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23938
dc.sourceIIOimport
dc.titleUse of X-ray techniques in the development and production of novel transistor structures
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage39
dc.source.endpage40
dc.source.conference7th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate2/06/2014
dc.source.conferencelocationSingapore Singapore
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6874676&contentType=Conference+Publications
imec.availabilityPublished - open access


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