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Physical origin of current collapse in Au-free AlGaN/GaN Schottky barrier diodes

dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorVenegas, Rafael
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-22T02:07:00Z
dc.date.available2021-10-22T02:07:00Z
dc.date.issued2014
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23963
dc.sourceIIOimport
dc.titlePhysical origin of current collapse in Au-free AlGaN/GaN Schottky barrier diodes
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage2196
dc.source.endpage2199
dc.source.journalMicroelectronics Reliability
dc.source.issue9_10
dc.source.volume54
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271414002273
imec.availabilityPublished - imec
imec.internalnotesSpecial issue: 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF; Berlin


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