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Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate

dc.contributor.authorJiang, Sijia
dc.contributor.authorMerckling, Clement
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMoussa, Alain
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSeefeldt, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-22T02:21:47Z
dc.date.available2021-10-22T02:21:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24011
dc.sourceIIOimport
dc.titleInfluence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate
dc.typeMeeting abstract
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewno
dc.source.conferenceECS and SMEQ Joint International Meeting
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
imec.availabilityPublished - imec


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