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Influence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates

dc.contributor.authorJiang, Sijia
dc.contributor.authorMerckling, Clement
dc.contributor.authorMoussa, Alain
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBarla, Kathy
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSeefeldt, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-22T02:22:10Z
dc.date.available2021-10-22T02:22:10Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24012
dc.sourceIIOimport
dc.titleInfluence of trench width on III-V nucleation during InP selective area growth on patterned Si(001) substrates
dc.typeProceedings paper
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage501
dc.source.endpage511
dc.source.conferenceSiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/64/6/501.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 64, Issue 6


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