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MOCVD growth of highly-resistive carbon-doped GaN on 200 mm silicon

dc.contributor.authorJie, Su
dc.contributor.authorEric, Armour
dc.contributor.authorBalakrishnan, Krishnan
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorParanjpe, Ajit
dc.contributor.authorPapasouliotis, George
dc.date.accessioned2021-10-22T02:22:27Z
dc.date.available2021-10-22T02:22:27Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24013
dc.sourceIIOimport
dc.titleMOCVD growth of highly-resistive carbon-doped GaN on 200 mm silicon
dc.typeProceedings paper
dc.source.peerreviewyes
dc.source.beginpageL3
dc.source.conference56th Electronic Materials Conference - EMC
dc.source.conferencedate25/06/2014
dc.source.conferencelocationSanta Barbara, CA USA
imec.availabilityPublished - imec


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