MOCVD growth of highly-resistive carbon-doped GaN on 200 mm silicon
dc.contributor.author | Jie, Su | |
dc.contributor.author | Eric, Armour | |
dc.contributor.author | Balakrishnan, Krishnan | |
dc.contributor.author | Van Hove, Marleen | |
dc.contributor.author | Saripalli, Yoga | |
dc.contributor.author | Paranjpe, Ajit | |
dc.contributor.author | Papasouliotis, George | |
dc.date.accessioned | 2021-10-22T02:22:27Z | |
dc.date.available | 2021-10-22T02:22:27Z | |
dc.date.issued | 2014 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/24013 | |
dc.source | IIOimport | |
dc.title | MOCVD growth of highly-resistive carbon-doped GaN on 200 mm silicon | |
dc.type | Proceedings paper | |
dc.source.peerreview | yes | |
dc.source.beginpage | L3 | |
dc.source.conference | 56th Electronic Materials Conference - EMC | |
dc.source.conferencedate | 25/06/2014 | |
dc.source.conferencelocation | Santa Barbara, CA USA | |
imec.availability | Published - imec |
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