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Co/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application

dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorKim, Woojin
dc.contributor.authorTahmasebi, Taiebeh
dc.contributor.authorSwerts, Johan
dc.contributor.authorMertens, Sofie
dc.contributor.authorHeylen, Nancy
dc.contributor.authorMin, Tai
dc.date.accessioned2021-10-22T02:29:01Z
dc.date.available2021-10-22T02:29:01Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24033
dc.sourceIIOimport
dc.titleCo/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application
dc.typeProceedings paper
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorKim, Woojin
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage478
dc.source.endpage481
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2014
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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