Show simple item record

Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study

dc.contributor.authorLenka, Hara
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorModarresi, H.
dc.contributor.authorBender, Hugo
dc.contributor.authorVantomme, Andre
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-22T02:54:24Z
dc.date.available2021-10-22T02:54:24Z
dc.date.issued2014
dc.identifier.issn0168-583X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24111
dc.sourceIIOimport
dc.titleDislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study
dc.typeJournal article
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.source.peerreviewyes
dc.source.beginpage69
dc.source.endpage73
dc.source.journalNuclear Instruments and Methods in Physics Research B
dc.source.volume331
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0168583X14002687
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record