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Molecular beam epitaxy of narrow-gap III-V antimonides for infrared detectors and sources

dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorGrietens, Bob
dc.contributor.authorNemeth, Stefan
dc.contributor.authorGenoe, Jan
dc.contributor.authorVan Hoof, Chris
dc.date.accessioned2021-09-30T11:30:10Z
dc.date.available2021-09-30T11:30:10Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2414
dc.sourceIIOimport
dc.titleMolecular beam epitaxy of narrow-gap III-V antimonides for infrared detectors and sources
dc.typeProceedings paper
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage53
dc.source.endpage62
dc.source.conferenceHeterostructure Epitaxy and Devices - HEAD'97
dc.source.conferencedate12/10/1997
dc.source.conferencelocationSmolenice Slovakia
imec.availabilityPublished - open access
imec.internalnotesNATO Science Series. 3: High Technology; Vol. 48


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