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Breakdown investigation in GaN-based MIS-HEMT devices

dc.contributor.authorMarino, Fabio
dc.contributor.authorBisi, Davide
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorVerzellesi, Giovanni
dc.contributor.authorZanoni, Enrico
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorMeneghesso, Gaudio
dc.date.accessioned2021-10-22T03:32:09Z
dc.date.available2021-10-22T03:32:09Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24210
dc.sourceIIOimport
dc.titleBreakdown investigation in GaN-based MIS-HEMT devices
dc.typeProceedings paper
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.source.peerreviewyes
dc.source.beginpage377
dc.source.endpage380
dc.source.conference44th European Solid-State Device Conference - ESSDERC
dc.source.conferencedate22/09/2014
dc.source.conferencelocationVenize Italy
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948839
imec.availabilityPublished - imec


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